Design & Reuse
Catalog of SIP Cores
System on Chip design resources
arrow Arithmetic & Mathematic (46)
arrow Embedded Memories (996)
arrow I/O Library (1032)
arrow PLL (1746)
arrow Standard cell (756)
996 IP
801
0.118
Two Port Register File Compiler IP, UMC 55nm SP process
UMC 55nm SP Low-K Logic process synchronous Two Port Register File memory compiler....
802
0.118
Two Port Register File Compiler IP, UMC 65nm LL process
UMC 65nm LL/RVT Low-K Logic process synchronous high density Two Port Register File SRAM memory compiler....
803
0.118
Two Port Register File Compiler IP, UMC 65nm SP process
UMC 0.65um SP/RVT Low-K Logic process synchronous Two Port Register File memory compiler....
804
0.118
Two Port Register File Compiler IP, UMC 90nm LL process
UMC 90nm LL/RVT Synchronous high density Two Port Register File memory compiler....
805
0.118
Two Port Register File Compiler IP, UMC 90nm SP process
UMC 90nm Standard Performance Low-K process Two Port SRAM Register File compiler....
806
0.118
Two Port Register File Compiler IP, UMC 90nm SP process
UMC 90nm SP Logic Low-K process synchronous Two Port (1R1W) Register File SRAM memory compiler....
807
0.0
1 Port High-Current Register File Compiler with Column Redundancy, Low Leakage with retention, Power Gating w/wo retention, Dual Rail, Mixed VT option
1 Port Register File Compiler with Column Redundancy, Low Leakage with retention, Power Gating w/wo retention, Dual Rail, Mixed VT option...
808
0.0
2 Port High-Density Register File Compiler with Column Redundancy, Low Leakage with retention, Power Gating w/wo retention, Dual Rail, Mixed VT option
2 Port High-Density Register File Compiler with Column Redundancy, Low Leakage with retention, Power Gating w/wo retention, Dual Rail, Mixed VT option...
809
0.0
1 Port Multi-Bank Register File Compiler with Column Redundancy, Low Leakage with retention, Power Gating w/wo retention, Dual Rail, Mixed VT option
1 Port Multi-Bank Register File Compiler with Column Redundancy, Low Leakage with retention, Power Gating w/wo retention, Dual Rail, Mixed VT option...
810
0.0
3.6Kbit EEPROM IP with configuration 28p8w16bit
GF130_EEPROM_01 is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 3.6Kbit, which is organized as 28 pages of 8...
811
0.0
1024-bit EEPROM IP with configuration 32p2w16bit
The block is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1024 bits (16(bit per word) x 2(word per page) x 3...
812
0.0
2048bits EEPROM with configuration 16p8w16bit
130GF_EEPROM_05 is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 2048bit, which is organized as 16 pages of 8...
813
0.0
104x1 Bits OTP (One-Time Programmable) IP, VI- 0.15μm 1.8V/6V BCD G2 EPI Process
The ATO00104X1VI150BIO2N2B is organized as a 104-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in VI- 0.15μ...
814
0.0
512-bit EEPROM (NTLab)
The block is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 512 bits (16(bit per word) x 2(word per page) x 16...
815
0.0
512-bit EEPROM with configuration 16p1w32bit
The block is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 512 bits (32(bit per word) x 1(word per page) x 16...
816
0.0
512bit EEPROM IP with configuration 16p2w16bit
180SMIC_EEPROM_09 is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 512 bits which is organized as 16 pages of...
817
0.0
512x1 Bits OTP (One-Time Programmable) IP, HHGrac- 95nm 1.5V/5V Embedded SONOS Flash (EF095LP)
The ATO00512X1HH095SON3NA is organized as a 512-bits by 1 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in ...
818
0.0
512x1 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V CMOS 18B Process
The ATO00512X1MX180LB52ND is organized as a 512-bit by 1 one-time programmable (OTP). This is a type of non-volatile memory fabricated in MXI- 0.18μ...
819
0.0
512x1 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V CMOS 18B Process,Using 5V devices only
The ATO00512X1MX180LB52ND is organized as a 512-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in MXI- 0.18μm ...
820
0.0
512x1 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V CMOS 18B1(BCD_EPI)
The ATO00512X1MX180B152NA is organized as a 512x1 one-time programmable(OTP). This is a type of non-volatile memory fabricated in MXI- 0.18μm CMOS 18B...
821
0.0
512x1 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V Logic Process
The ATO00512X1MX180LA52NA is organized as a 512-bit by 1 one-time programmable (OTP). This is a type of non-volatile memory fabricated in MXIC 0.18μm...
822
0.0
512x1 Bits OTP (One-Time Programmable) IP, NJR- 0.05μm UD50SP Process
The AT512X1UD50SP0AA is organized as a 512-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in UD50SP process. ...
823
0.0
512x1 Bits OTP (One-Time Programmable) IP, S-_h-nix HC130SFN 1.8V/2.8V Process
The ATO00512X1HY180CIS3NA is organized as a 512-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in SK_hynix HC...
824
0.0
512X1 Bits OTP (One-Time Programmable) IP, TSM- 0.18μm SiGe BiCMOS 1.8V/3.3V Process
The ATO00512X1TS180SGE3NA is organized as a 512-bit by 1 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSMC 0.18μm...
825
0.0
512x1 Bits OTP (One-Time Programmable) IP, TSM- 152nm 1.8V/3.3V Mixed Signal
The ATO00512X1TS152GMS3NA is organized as a 512-bits by 1 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in...
826
0.0
512x1 Bits OTP (One-Time Programmable) IP, UM- 0.18μm 1.8V/5V BCD Process
The ATO00512X1UM180B502NA is organized as a 512-bit by 1 one-time programmable (OTP). This is a type of non-volatile memory fabricated in UM- 0.18μm B...
827
0.0
512x1 Bits OTP (One-Time Programmable) IP, VI- 0.15μm BCD Generation-2 Process
The ATO00512X1VI150B252NB is organized as a 512-bit by 1 one-time programmable (OTP). This is a type of non-volatile memory fabricated in VI- 0.15μm B...
828
0.0
512x1 Bits OTP (One-Time Programmable) IP, VI- 0.15μm BCD Generation-2 Process
The ATO00512X1VI150B252NA is organized as a 512-bit by 1 one-time programmable (OTP). This is a type of non-volatile memory fabricated in VI- 0.15μm B...
829
0.0
512x1 Bits OTP (One-Time Programmable) IP, VI- 0.18μm standard CMOS mixed-signal Process
The AT512X1V180MM0AA I-fuse® IP is organized as 512 bits one-time programmable (OTP). This is a kind of non-volatile memory fabricated in VIS 180nm CM...
830
0.0
512x1 Bits OTP (One-Time Programmable) IP, VI- 110nm 1.5V/3.3V
The AT512X1V110MM0AA is organized as a 512-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in VIS 110nm CMOS l...
831
0.0
512x16 Bits OTP (One-Time Programmable) IP, D- HiTe- AN180 1.8V / 5V Process
The ATO0512X16DB180AO14NA is organized as 512x16 One-Time Programmable in 16-bit read and 1-bit program modes. This is a kind of non-volatile memory s...
832
0.0
512x8 Bits OTP (One-Time Programmable) IP, GLOBA-FOUNDR--- 0.13um BCD 1.5V/5V Process
The ATO00512X8GF130BCD3NA is organized as a 512-bits by 8 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in ...
833
0.0
512x8 Bits OTP (One-Time Programmable) IP, SMI- 110nm 1.2V/3.3V Mixed Signal Generic Process
The AT512X8Z110LL0AA is organized as a 512-bit by 8 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in SMI- 110nm 1.2V/3...
834
0.0
512x8 Bits OTP (One-Time Programmable) IP, SMI- 110nm 1.2V/3.3V Mixed Signal Generic Process
The AT512X8Z110LLSAA is organized as 512 bits by 8 one-time programmable in 8-bit read and 1-bit program modes. This is a kind of non-volatile memory ...
835
0.0
512x8 Bits OTP (One-Time Programmable) IP, Towe- Semiconduct-- SBC18H5 Family 180nm 1.8V/3.3V SiGe BiCMOS Process
The ATO00512X8TJ180SBC4NA is organized as 512 bits by 8 one-time programmable in 8-bit read and 1-bit program modes. This is a kind of non-volatile me...
836
0.0
128x1 Bits OTP (One-Time Programmable) IP, TSM- 0.18μm 1.8V/3.3V Mixed-Signal process
The ATO00128X1TS180MSG3OA is organized as a 128-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in 0.18um CMOS...
837
0.0
128x1 Bits OTP (One-Time Programmable) IP, UM- 0.153μm Logic and Mixed-Mode 1.8V/3.3V process
The ATO00128X1UM153LMM3NA is organized as a 128-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in 0.153um CMO...
838
0.0
128x1 Bits OTP (One-Time Programmable) IP, UM- 0.18μm 1.8V/5V BCD Process
The ATO00128X1UM180B502NA is organized as a 128-bit by 1 one-time programmable (OTP). This is a type of non-volatile memory fabricated in UM- 0.18μm B...
839
0.0
128x16 Bits OTP (One-Time Programmable) IP, D-Hite- 0.13μm BCD Process Platforms
The ATO0128X16DB130BSA3NA is organized as a 128x16 one-time programmable (OTP). This is a type of non-volatile memory fabricated in D-Hite- BD130LVA (...
840
0.0
128x16 Bits OTP (One-Time Programmable) IP, X-FA- XR013 2.5V SOI Process
The AT128X16B130XR0BA is organized as 128 words by 16 bits one-time programmable in 16-bit read and 1-bit program modes. This is a type of non-volat...
841
0.0
128X8 Bits OTP (One-Time Programmable) IP, Ca-Sem- 0.18μm 1.8V/3.3V Process
The ATO00128X8CA180L333NA is organized as a 128-bit by 8 one-time programmable (OTP).This is a kind of non-volatile memory fabricated in Ca-Sem- 0.18μ...
842
0.0
128x8 Bits OTP (One-Time Programmable) IP, SMI- 0.18µm 1.8V/3.3V Mixed Signal Process
The AT128X8Z180MH0AA is organized as a 128-bit by 8 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in 0.18µm standard ...
843
0.0
128x8 Bits OTP (One-Time Programmable) IP, SMI- 110nm 1.2V/3.3V Mixed Signal HE Process
The AT128X8Z110LL0AA is organized as 128 bits by 8 one-time programmable in 8-bit read and 1-bit program modes. This is a kind of non-volatile memory ...
844
0.0
128x8 Bits OTP (One-Time Programmable) IP, TSM- 55nm LP 1.2V/2.5V & ULP 0.9V/2.5V Mixed-Signal, General Purpose Process
The ATO00128X8TS055ULP3NA is organized as 128x8 one-time programmable (OTP) in 8-bit read and 1-bit program modes. This is a kind of non-volatile memo...
845
0.0
32x1 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V Logic 18A Process
The ATO00032X1MX180LOG2NA is organized as a 32-bit by 1 one-time programmable (OTP). This is a type of non-volatile memory fabricated in MXI- 0.18μm l...
846
0.0
32x1 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V Logic Process
The ATO00032X1MX180LB52NC is organized as a 32-bit by 1 one-time programmable (OTP). This is a type of non-volatile memory fabricated in MXI- 0.18μm l...
847
0.0
32x1 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V Logic Process
The ATO00032X1MX180LB52ND is organized as a 32-bit by 1 one-time programmable (OTP). This is a type of non-volatile memory fabricated in MXI- 0.18μm l...
848
0.0
32x1 Bits OTP (One-Time Programmable) IP, UM- 0.162μm 1.8V/3.3V Process
The AT32X1U162GN0AA is organized as a 32-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in 0.162um standard C...
849
0.0
32x22 Bits OTP (One-Time Programmable) IP, X-FA- 0.18um XH018 1.8V/3.3V Process
The AT32X22B180GN0AA is organized as a 32 by 22 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in X-FA- 0.18um XH018 te...
850
0.0
32x8 Bits OTP (One-Time Programmable) IP, TSM- 0.18μm Mixed-Signal 1.8V/3.3V Process
The ATO00032X8TS180GS33NA is organized as 32x8 one-time programmable (OTP) in 8-bit read and 1-bit program modes. This is a kind of non-volatile memor...